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GP1200ESM33
GP1200ESM33
High Reliability Single Switch IGBT Module Advance Information
Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001
FEATURES
s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
3300V 3.4V 1200A 2400A
APPLICATIONS
s s s s
High Reliability Inverters C1 Motor Controllers Traction Drives Resonant Converters Aux C
External connection C2 C3
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
G Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram E3
ORDERING INFORMATION
Order As: GP1200ESM33 Note: When ordering, please use the whole part number.
Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 80C 1ms, Tcase = 120C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 3300 20 1200 2400 14.7 6000 Units V V A A kW V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 125 125 125 5 2 10 C C C Nm Nm Nm 4 C/kW 16.3 C/kW Min. Max. 8.5 Units C/kW
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GP1200ESM33
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 1200A VGE = 15V, IC = 1200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 1200A IF = 1200A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.4 4.3 2.3 2.4 300 10 Max. 3 100 12 6.5 4.3 5 1200 2400 2.9 3 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 1200A VGE = 15V VCE = 1800V RG(ON) = 1.8, RG(OFF) = 3.3 CGE = 660nF, L ~ 90nH IF = 1200A, VR = 1800V, dIF/dt = 5500A/s Min. Typ. 3.2 0.9 1.6 1.1 0.4 1.6 600 1200 0.7 Max. Units s s J s s J C A J
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 1200A VGE = 15V VCE = 1800V RG(ON) = 1.8, RG(OFF) = 3.3 CGE = 660nF, L ~ 90nH IF = 1200A, VR = 1800V, dIF/dt = 4500A/s Min. Typ. 3.4 1.5 2.4 1.1 0.5 2.3 1000 1300 1.1 Max. Units s s J s s J C A J
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 2400 Common emitter 2200 Tcase = 25C 2000 1800
Collector current, Ic - (A)
Vge = 20/15/12/10V 2400 Common emitter 2200 Tcase = 125C 2000 1800
Collector current, Ic - (A)
1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0
1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
2400 2200 2000 1800
Foward current, IF - (A)
2800 2600 2400
Tj = 25C Tj = 125C
2200
1600
Collector current, IC - (A)
2000 1800
1400 1200 1000 800 600 400 200 0 1.0 1.5 2.0 2.5 Foward voltage, VF - (V) 3.0 3.5
1600 1400 1200 1000 800 600 Tcase = 125C Vge = 15V 400 Rg(OFF) = 3.3 CGE = 660nF 200 dVCE/dt < 9000V/s 0 2500 0 500 1000 1500 2000 3000 Collector-emitter voltage, Vce - (V)
3500
Fig.5 Diode typical forward characteristics
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
10000 IC max. (single pulse)
tp = 100s
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Diode Transistor 10
1000
Collector current, IC - (A)
IC
tp
100
m
=
ax
1m
.D
s
C
(c
on
tin
uo
1
us
10
)
Conditions: Tvj = 125C, Tcase = 80C
1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
0.1 0.001
0.01
0.1 Pulse width, tp - (ms)
1
10
Fig.7 Forward bias safe operating area
Fig.8 Transient thermal impedance
2400 2200 2000
400 380 360
Input capacitance, Cies - (nF)
Tvj = 25C, VCE = 25V VGE = 0V, f = 1MHz
DC collector current, IC - (A)
1800 1600 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160
340 320 300 280 260 240 220 200 0
10
20 30 40 50 Collector-emitter voltage, VCE - (V)
60
Fig.9 DC current rating vs case temperature
Fig.10 Typical input capacitance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1700g Module outline type code: E
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200ESM33
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5308-2 Issue No. 2.1 February 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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